Kunshan Huatai electronics Ltd. have firstly produced the broadband 6W and 10W transistors in China, which can cover various applications from 100MHz to 3.5GHz, based on its own LDMOS and high-power plastic package techniques. These products have been recognized and well regarded by the market since they were produced. Especially the 10W transistor HTN7G27S010P has been recognized by many major domestic base station and become the main model of 0.5W MDAS products.
In the case of the output power of PA at 31dBm, the HTN7G27S010P can meet the requirements of different types of signal which performance of excellent efficiency and linearity is excellent. The following are listing the test results of several common frequency bands.
VDD=28Vdc, IDQ = 140 mA, Pout = 31.0 dBm (1.26W) Avg., Single Carrier W-CDMA, Input Signal PAR = 9.9 dB @0.01% Probability on CCDF, in Huatai Demo Test Fixture.